Package-on-package assembly with wire bonds to encapsulation surface

ABSTRACT

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of and claims benefit ofpriority to U.S. patent application Ser. No. 16/058,425, filed Aug. 8,2018, which is a continuation of U.S. patent application Ser. No.15/628,851, filed Jun. 21, 2017, now U.S. Pat. No. 10,062,661, which isa continuation of U.S. patent application Ser. No. 14/979,053, filedDec. 22, 2015, now U.S. Pat. No. 9,691,731, which is a continuation ofU.S. patent application Ser. No. 14/564,640, filed Dec. 9, 2014, nowU.S. Pat. No. 9,224,717, which is a continuation of U.S. patentapplication Ser. No. 13/792,521, filed Mar. 11, 2013, now U.S. Pat. No.9,093,435, which is a divisional of U.S. patent application Ser. No.13/462,158, filed May 2, 2012, now U.S. Pat. No. 8,618,659, which claimsthe benefit of the filing date of Korean Patent Application No.10-2011-0041843, filed May 3, 2011, now Korean Patent No. 1128063, thedisclosures of each of which are incorporated herein by reference intheir entirety.

TECHNICAL FIELD

The subject matter of this application relates to microelectronicpackages and fabrication methods thereof, particularly those whichincorporate wire bonds for electrical connection with an element above asurface of an encapsulation layer.

BACKGROUND OF THE INVENTION

Microelectronic devices such as semiconductor chips typically requiremany input and output connections to other electronic components. Theinput and output contacts of a semiconductor chip or other comparabledevice are generally disposed in grid-like patterns that substantiallycover a surface of the device (commonly referred to as an “area array”)or in elongated rows which may extend parallel to and adjacent each edgeof the device's front surface, or in the center of the front surface.Typically, devices such as chips must be physically mounted on asubstrate such as a printed circuit board, and the contacts of thedevice must be electrically connected to electrically conductivefeatures of the circuit board.

Semiconductor chips are commonly provided in packages that facilitatehandling of the chip during manufacture and during mounting of the chipon an external substrate such as a circuit board or other circuit panel.For example, many semiconductor chips are provided in packages suitablefor surface mounting. Numerous packages of this general type have beenproposed for various applications. Most commonly, such packages includea dielectric element, commonly referred to as a “chip carrier” withterminals formed as plated or etched metallic structures on thedielectric. These terminals typically are connected to the contacts ofthe chip itself by features such as thin traces extending along the chipcarrier itself and by fine leads or wires extending between the contactsof the chip and the terminals or traces. In a surface mountingoperation, the package is placed onto a circuit board so that eachterminal on the package is aligned with a corresponding contact pad onthe circuit board. Solder or other bonding material is provided betweenthe terminals and the contact pads. The package can be permanentlybonded in place by heating the assembly so as to melt or “reflow” thesolder or otherwise activate the bonding material.

Many packages include solder masses in the form of solder balls,typically about 0.1 mm and about 0.8 mm (5 and 30 mils) in diameter,attached to the terminals of the package. A package having an array ofsolder balls projecting from its bottom surface is commonly referred toas a ball grid array or “BGA” package. Other packages, referred to asland grid array or “LGA” packages are secured to the substrate by thinlayers or lands formed from solder. Packages of this type can be quitecompact. Certain packages, commonly referred to as “chip scalepackages,” occupy an area of the circuit board equal to, or onlyslightly larger than, the area of the device incorporated in thepackage. This is advantageous in that it reduces the overall size of theassembly and permits the use of short interconnections between variousdevices on the substrate, which in turn limits signal propagation timebetween devices and thus facilitates operation of the assembly at highspeeds.

Packaged semiconductor chips are often provided in “stacked”arrangements, wherein one package is provided, for example, on a circuitboard, and another package is mounted on top of the first package. Thesearrangements can allow a number of different chips to be mounted withina single footprint on a circuit board and can further facilitatehigh-speed operation by providing a short interconnection betweenpackages. Often, this interconnect distance is only slightly larger thanthe thickness of the chip itself. For interconnection to be achievedwithin a stack of chip packages, it is necessary to provide structuresfor mechanical and electrical connection on both sides of each package(except for the topmost package). This has been done, for example, byproviding contact pads or lands on both sides of the substrate to whichthe chip is mounted, the pads being connected through the substrate byconductive vias or the like. Solder balls or the like have been used tobridge the gap between the contacts on the top of a lower substrate tothe contacts on the bottom of the next higher substrate. The solderballs must be higher than the height of the chip in order to connect thecontacts. Examples of stacked chip arrangements and interconnectstructures are provided in U.S. Patent App. Pub. No. 2010/0232129 (“the'129 Publication”), the disclosure of which is incorporated by referenceherein in its entirety.

Microcontact elements in the form of elongated posts or pins may be usedto connect microelectronic packages to circuit boards and for otherconnections in microelectronic packaging. In some instances,microcontacts have been formed by etching a metallic structure includingone or more metallic layers to form the microcontacts. The etchingprocess limits the size of the microcontacts. Conventional etchingprocesses typically cannot form microcontacts with a large ratio ofheight to maximum width, referred to herein as “aspect ratio”. It hasbeen difficult or impossible to form arrays of microcontacts withappreciable height and very small pitch or spacing between adjacentmicrocontacts. Moreover, the configurations of the microcontacts formedby conventional etching processes are limited.

Despite all of the above-described advances in the art, still furtherimprovements in making and testing microelectronic packages would bedesirable.

BRIEF SUMMARY OF THE INVENTION

An embodiment of the present disclosure relates to a microelectronicpackage. The microelectronic package includes a substrate having a firstregion and a second region and a first surface and a second surfaceremote from the first surface. At least one microelectronic elementoverlies the first surface within the first region. Electricallyconductive elements are exposed at at least one of the first surface andthe second surface of the substrate within the second region, and atleast some of the conductive elements are electrically connected to theat least one microelectronic element. The microelectronic packagefurther includes wire bonds having bases joined to respective ones ofthe conductive elements and end surfaces remote from the substrate andremote from the bases, each wire bond defining an edge surface extendingbetween the base and the end surface thereof. A dielectric encapsulationlayer extends from at least one of the first or second surfaces andfills spaces between the wire bonds such that the wire bonds areseparated from one another by the encapsulation layer. The encapsulationlayer overlies at least the second region of the substrate, andunencapsulated portions of the wire bonds are defined by at leastportions of the end surfaces of the wire bonds that are uncovered by theencapsulation layer. The substrate can be a lead frame and theconductive elements can be leads of the lead frame.

The unencapsulated portions of the wire bonds can be defined by the endsurfaces of the wire bonds and portions of the edge surfaces adjacentthe end surfaces that are uncovered by the encapsulation layer. Anoxidation protection layer can be included contacting at least some ofthe unencapsulated portions of the wire bonds. At least a portion of atleast one of the wire bonds adjacent the end surface thereof can besubstantially perpendicular to a surface of the encapsulation layer. Theconductive elements can be first conductive elements, and themicroelectronic package can further include a plurality of secondconductive elements electrically connected to the unencapsulatedportions of the wire bonds. In such an embodiment, the second conductiveelements can be such that they do not contact the first conductiveelements. The second conductive elements can include a plurality of studbumps joined to the end surfaces of at least some of the first wirebonds.

At least one of the wire bonds can extend along a substantially straightline between the base and the unencapsulated portion thereof, and thesubstantially straight line can form an angle of less than 90° withrespect to the first surface of the substrate. Additionally oralternatively, the edge surface of at least one of the wire bonds canhave a first portion adjacent the end surface and a second portionseparated from the end surface by the first portion, and the firstportion can extend in a direction away from a direction in which thesecond portion extends.

Another embodiment of the present disclosure relates to an alternativemicroelectronic package. Such a microelectronic package includes asubstrate having a first region and a second region, and a first surfaceand a second surface remote from the first surface. At least onemicroelectronic element overlies the first surface within the firstregion. Electrically conductive elements are exposed at at least one ofthe first surface and the second surface of the substrate within thesecond region, and at least some of the conductive elements areelectrically connected to the at least one microelectronic element. Themicroelectronic package further includes a plurality of wire bondshaving bases joined to respective ones of the conductive elements andend surfaces remote from the substrate and remote from the bases. Eachwire bond defines an edge surface extending between the base and the endsurface thereof. A dielectric encapsulation layer extends from at leastone of the first or second surfaces and fills spaces between wire bondssuch that the wire bonds are separated from one another by theencapsulation layer. The encapsulation layer overlies at least thesecond region of the substrate, and unencapsulated portions of the wirebonds are defined by at least portions of the edge surfaces adjacent theend surfaces of the wire bonds that are uncovered by the encapsulationlayer.

The encapsulation layer can be a monolithic layer formed on thesubstrate by depositing a dielectric material onto the first substrateafter forming the wire bonds, and then curing the deposited dielectricmaterial. The forming of the monolithic encapsulation layer can includemolding the dielectric material.

At least one of the unencapsulated portions can be further defined by atleast a portion of the end surface that is uncovered by theencapsulation layer. The portion of the edge surface that is uncoveredby the encapsulation layer can have a longest dimension extending in adirection substantially parallel to the surface of the encapsulationlayer. The length of the portion of the edge surface that is uncoveredby the encapsulation layer and extends substantially parallel to thesurface of the encapsulation layer can be greater than a cross-sectionalwidth of the wire bond.

In either of the aforementioned embodiments, the first surface of thesubstrate can extend in first and second lateral directions, eachlateral direction being transverse to a direction of a thickness of thesubstrate between the first and second surfaces. The unencapsulatedportion of at least one of the wire bonds can further be displaced in atleast one of the lateral directions from the conductive element to whichthe at least one wire bond is joined. At least one of the wire bonds caninclude a substantially curved portion between the base and the endsurface thereof. The unencapsulated portion of the at least one wirebond can overlie a major surface of the microelectronic element.

In either of the aforementioned embodiments, a solder ball can be joinedto the unencapsulated portion of least one of the wire bonds.

Additionally, in either of the aforementioned embodiments, theencapsulation layer can include at least one surface, and theunencapsulated portions of the wire bonds can be uncovered by theencapsulation layer at one of the at least one surface. The at least onesurface can include a major surface that is substantially parallel tothe first surface of the substrate, and the unencapsulated portion of atleast one of the wire bonds can be uncovered by the encapsulation layerat the major surface. The unencapsulated portion of at least one wirebond can be substantially flush with the major surface. Alternatively,the unencapsulated portion of at least one wire bond can extend abovethe major surface. The at least one surface can include a major surfaceat a first distance from the first surface of the substrate and arecessed surface at a second distance from first surface of thesubstrate that is less than the first distance, and the unencapsulatedportion of at least one of the wire bonds can be uncovered by theencapsulation layer at the recessed surface. The at least one surfacecan further include a side surface extending away from the first surfaceof the substrate at a substantial angle therefrom, and theunencapsulated portion of at least one wire bond can be uncovered by theencapsulation layer at the side surface. The encapsulation layer canhave a cavity formed therein that extends from a surface of theencapsulation layer toward the substrate, and the unencapsulated portionof one of the wire bonds can be disposed within the cavity.

Further, in either of the aforementioned embodiments, the wire bonds canconsist essentially of at least one material selected from the groupconsisting of copper, gold, aluminum, and solder. At least one of thewire bonds can define a longitudinal axis along a length thereof, andeach wire bond can include an inner layer of a first material extendingalong the longitudinal axis and an outer layer of a second materialremote from the longitudinal axis and having a length extending in alengthwise direction of such wire bond. In such an embodiment, the firstmaterial can be one of copper, gold, nickel, and aluminum, and thesecond material can be one of copper, gold, nickel, aluminum, andsolder.

In either of the aforementioned embodiments, the plurality of wire bondscan be first wire bonds, and the microelectronic package can furthercomprise at least one second wire bond having a base joined to a contacton the microelectronic element and an end surface thereof remote fromthe contact. The at least one second wire bond can define an edgesurface extending between the base and the end surface, and anunencapsulated portion of the at least one second wire bond can bedefined by a portion of at least one of the end surface of such secondwire bond or of the edge surface of such second wire bond that isuncovered by the encapsulation layer. The at least one microelectronicelement can be a first microelectronic element, and the microelectronicpackage can further comprise at least one second microelectronic elementat least partially overlying the first microelectronic element. In suchan embodiment, the wire bonds can be first wire bonds, and themicroelectronic package can have at least one second wire bond having abase joined to a contact on the microelectronic element and an endsurface remote from the contact. The at least one second wire bond candefine an edge surface between the base and the end surface, and anunencapsulated portion of the second wire bond can be defined by atleast one of a portion of the end surface of such second wire bond or ofthe edge surface of such second wire bond that is uncovered by theencapsulation layer.

In either of the above embodiments, a first one of the wire bonds can beadapted for carrying a first signal electric potential and a second oneof the wire bonds can be adapted for simultaneously carrying a secondelectric potential different from the first signal electric potential.

Either of the above embodiments can further include a redistributionlayer extending along the surface of the encapsulation layer. Theredistribution layer can include a redistribution substrate having afirst surface adjacent a major surface of the encapsulation layer, andthe redistribution layer can further include a second surface remotefrom the first surface, first conductive pads exposed on the firstsurface of the redistribution substrate and aligned with andmechanically connected to respective unencapsulated portions of the wirebonds, and second conductive pads exposed on the second surface of thesubstrate electrically connected to the first conductive pads.

In a further embodiment, a microelectronic assembly can include a firstmicroelectronic package according to either of the above embodiments.The assembly can further include a second microelectronic package havinga substrate with a first surface and a second surface. A secondmicroelectronic element can be mounted to the first surface, and contactpads can be exposed at the second surface and can be electricallyconnected to the second microelectronic element. The secondmicroelectronic package can be mounted to the first microelectronicpackage such that the second surface of the second microelectronicpackage overlies at least a portion of the surface of the dielectricencapsulation layer and such that at least some of the contact pads areelectrically and mechanically connected to at least some of theunencapsulated portions of the wire bonds.

Another embodiment of the present disclosure can relate to amicroelectronic package including a substrate having a first region anda second region, and a first surface and a second surface remote fromthe first surface and extending in lateral directions. A microelectronicelement overlies the first surface within the first region and has amajor surface remote from the substrate. Electrically conductiveelements are exposed at the first surface of the substrate within thesecond region with at least some of the conductive elements beingelectrically connected to the microelectronic element. Themicroelectronic package further includes wire bonds having bases joinedto respective ones of the first electrically conductive elements and endsurfaces remote from the substrate and remote from the bases. Each wirebond defines an edge surface extending between the base and the endsurface thereof. A dielectric encapsulation layer extends from at leastone of the first or second surfaces and fills spaces between the wirebonds such that the wire bonds are separated from one another by thedielectric layer. The encapsulation layer overlies at least the secondregion of the substrate, and unencapsulated portions of the wire bondsare defined by at least portions of the end surfaces of the wire bondsthat are uncovered by the encapsulation layer. The unencapsulatedportion of at least one wire bond is displaced in at least one lateraldirection along the first surface from the conductive element to whichthe at least one wire bond is joined such that the unencapsulatedportion thereof overlies the major surface of the microelectronicelement.

The conductive elements can be arranged in a first array of a firstpredetermined configuration, and the unencapsulated portions of the wirebonds can be arranged in a second array of a second predeterminedconfiguration that is different from the first predeterminedconfiguration. The first predetermined configuration can becharacterized by a first pitch and the second configuration can becharacterized by a second pitch that is finer than the first pitch. Aninsulating layer can extend over at least a surface of themicroelectronic element. The insulating layer can be disposed betweenthe surface of the microelectronic element and the at least one wirebond that has an unencapsulated portion overlying the major surface ofthe microelectronic element. A plurality of the unencapsulated portionsof respective ones of the wire bonds can overlie the major surface ofthe microelectronic element.

A microelectronic assembly according to an embodiment of the inventioncan include a first microelectronic package according the abovedescription. The assembly can further include a second microelectronicpackage including a substrate having a first surface and a secondsurface, a microelectronic element affixed on the first surface, andcontact pads exposed on the second surface and electrically connected tothe microelectronic element. The second microelectronic package can beaffixed on the first microelectronic package such that the secondsurface of the second package overlies at least a portion of the surfaceof the dielectric layer and such that at least some of the contact padsare electrically and mechanically connected to at least some of theunencapsulated portions of the wire bonds.

The electrically conductive elements of the first microelectronicpackage can be arranged in a first array of a first predeterminedconfiguration, and the contact pads of the second microelectronicpackage can be arranged in a second array of a second predeterminedconfiguration that is different from the first predeterminedconfiguration. At least some of the unencapsulated portions of the wirebonds of the first microelectronic package can be arranged in a thirdarray that corresponds to the second predetermined configuration. Thefirst predetermined configuration can be characterized by a first pitch,and the second configuration can be characterized by a second pitch thatis finer than the first pitch.

A further embodiment of the present invention can relate to a method ofmaking a microelectronic package. The method includes forming adielectric encapsulation layer on an in-process unit. The in-processunit includes a substrate having a first surface and a second surfaceremote therefrom, a microelectronic element mounted to the first surfaceof the substrate, and a plurality of conductive elements exposed at thefirst surface. At least some of the conductive elements are electricallyconnected to the microelectronic element. The in-process unit furtherincludes wire bonds having bases joined to the conductive elements andend surfaces remote from the bases. Each wire bond defines an edgesurface extending away between the base and the end surface. Theencapsulation layer is formed so as to at least partially cover thefirst surface and portions of the wire bonds and such thatunencapsulated portions of the wire bonds are defined by a portion of atleast one of the end surface or of the edge surface thereof that isuncovered by the encapsulation layer. The substrate of the in-processunit can be a lead frame and the conductive elements can be leads of thelead frame. A stud bump can be formed on the unencapsulated portion ofat least one of the wire bonds. A solder ball can be deposited on theunencapsulated portion of at least one of the wire bonds.

The step of forming the encapsulation layer can include depositing adielectric material mass over the first surface and substantially all ofthe wire bonds and removing a portion of the dielectric material mass touncover portions of the wire bonds to define the unencapsulated portionsthereof. In a variation, at least one of the wire bonds can extend in aloop joined to each of at least two of the conductive elements. Thedielectric material mass can then be deposited so as to at leastpartially cover the first surface and the at least one wire bond loop,and removing a portion of the dielectric material mass can furtherinclude removing a portion of the at least one wire bond loop so assever it into first and second wire bonds having respective free endsthat are uncovered by the encapsulation layer to form the unencapsulatedportions thereof. The loop can be formed by joining a first end of awire to the conductive element, drawing the wire in a direction awayfrom the first surface, then drawing the wire in at least a lateraldirection along the first surface, and then drawing the wire to thesecond conductive element and joining the wire to the second conductiveelement.

The encapsulation layer can be formed on the in-process unit by pressinga dielectric material mass over the wire bonds from a location remotefrom the substrate and into contact with the first surface of thesubstrate such that the at least one of the wire bonds penetrates thedielectric material mass. The wire bonds can be made of wire consistingsubstantially of gold, copper, aluminum, or solder. The first wire bondscan include aluminum, and the wire bonds can be joined to the conductiveelement by wedge bonding. The step of forming the encapsulation layercan additionally or alternatively include forming at least one cavityextending from a major surface of the encapsulation layer toward thesubstrate, the at least one cavity surrounding the unencapsulatedportion of one of the wire bonds. The at least one cavity can be formedafter depositing a dielectric encapsulation material onto the substrateby at least one of wet etching, dry etching, or laser etching theencapsulation material. The at least one cavity can further be formed byremoving at least a portion of a mass of sacrificial material from apredetermined location of at least one of the wire bonds afterdepositing a dielectric encapsulation material onto the substrate andthe at least one wire bond. The step of forming the encapsulation layercan be carried out such that a portion of the mass of sacrificialmaterial is exposed on a major surface of the encapsulation layer, theexposed portion of the mass of sacrificial material surrounding aportion of the wire bond near the free end thereof and spacing apart aportion of the encapsulation layer therefrom. At least one of the wirebonds can define a longitudinal axis along a length thereof, and eachwire bond can include an inner layer of a first material extending alongthe longitudinal axis and an outer layer formed by the mass ofsacrificial material remote from the longitudinal axis and having alength extending in a lengthwise direction of such wire bond. A firstportion of the mass of sacrificial material can be removed to form thecavity with a second portion of the mass of sacrificial materialremaining adjacent to the base.

The first surface of the substrate can extend in lateral directions, andthe unencapsulated portion of at least one of the wire bonds can beformed such that the end surface thereof is displaced in at least one ofthe lateral directions from the conductive element to which the at leastone wire bond is joined. Accordingly, the in-process unit can be formedincluding a step of forming the wire bonds such that at least one of thewire bonds includes a substantially curved segment positioned betweenthe conductive element and the end surface of the at least one wirebond.

In a further variation, the substrate can include a first region and asecond region, and the microelectronic element can overlie the firstregion and can have a major surface remote from the substrate. The firstconductive element can be disposed within the second region, and thein-process unit can be formed including a step of forming the wire bondssuch that at least a portion of at least one of the wire bonds extendsover the major surface of the microelectronic element.

The wire bonds can define a longitudinal axis along a length thereof,and the wire bonds can include an inner layer of a first materialextending along the longitudinal axis and an outer layer of a secondmaterial remote from the longitudinal axis and extending along thelength of the wire bond. In such a variation, the first material can becopper and the second material can be solder. A portion of the secondmaterial can be removed after the step of forming the encapsulationlayer to form a cavity extending from a surface of the dielectric layerto uncover a portion of the edge surface of the inner layer of the wirebond.

A further embodiment of the present disclosure relates to amicroelectronic package including a substrate having a first region anda second region, the substrate having a first surface and a secondsurface remote from the first surface. At least one microelectronicelement overlies the first surface within the first region, andelectrically conductive elements are exposed at the first surface of thesubstrate within the second region with at least some of the conductiveelements electrically connected to the at least one microelectronicelement. A plurality of bond elements, each having a first base, asecond base, and an edge surface extending between the bases, the firstbase are joined to one of the conductive elements. The edge surfaceincludes a first portion that extends away from the contact pad to anapex of the edge surface remote from the substrate. The edge surfacefurther includes a second portion that extends from the apex to thesecond base, which is joined to a feature of the substrate. A dielectricencapsulation layer extends from at least one of the first or secondsurfaces and fills spaces between the first and second portions of thebond elements and between the plurality of bond elements such that thebond elements are separated from one another by the encapsulation layer.The encapsulation layer overlies at least the second region of thesubstrate. Unencapsulated portions of the bond elements are defined byat least portions of the edge surfaces of the bond elements surroundingthe apexes thereof that are uncovered by the encapsulation layer.

In a variation of the above embodiment, the bond elements are wirebonds. In such a variation, the feature of the substrate to which thesecond base of the substrate is joined can be the conductive element towhich the first base is joined. Alternatively, the feature of thesubstrate to which the second base is joined can be a respectiveconductive element different from the conductive element to which thefirst base is joined. Such a conductive element to which the second baseis joined can be not electrically connected to the microelectronicelement. In an alternative variation, the bond element can be a bondribbon. In such a variation, a portion of the first base can extendalong a portion of the respective contact pad, and the feature to whichthe second base is joined can be the length of the first base thatextends along a portion of the respective contact pad.

In the embodiment, the first surface of the substrate can extend infirst and second lateral directions, each lateral direction beingtransverse to a direction of a thickness of the substrate between thefirst and second surfaces. The unencapsulated portion of at least one ofthe wire bonds can then be displaced in at least one of the lateraldirections from the conductive element to which the at least one wirebond is joined. Further, the unencapsulated portion of the at least onewire bond can overlie a major surface of the microelectronic element.

A further embodiment of the present disclosure can relate to a method ofmaking a microelectronic assembly. The method of this embodiment caninclude joining a first microelectronic package made according to theabove embodiment with a second microelectronic package, the secondmicroelectronic package can include a substrate having a first surfaceand a plurality of contacts exposed at the first surface of thesubstrate, and joining the first microelectronic package with the secondmicroelectronic package can include electrically and mechanicallyconnecting the unencapsulated portions of the wire bonds of the firstmicroelectronic package with the contacts of the second microelectronicpackage.

A further embodiment of the present invention can relate to analternative method of making a microelectronic package. The method ofthis embodiment includes positioning a dielectric material mass over anin-process unit that includes a substrate having a first surface and asecond surface remote therefrom, a plurality of thin conductive elementsexposed at the first surface, and wire bonds having bases joined to atrespective ones of the thin conductive elements and end surfaces remotefrom the substrate and remote from the bases. Each wire bond defines anedge surface extending between the base and the end surface thereof. Themethod also includes forming an encapsulation layer on the in-processunit by pressing the dielectric material mass over the wire bond intocontact with the first surface of the substrate such that the wire bondspenetrate the dielectric material mass. The encapsulation layer, thus,fills spaces between the wire bonds such that the wire bonds areseparated from one another both the encapsulation layer with theencapsulation layer overlying at least the second region of thesubstrate. Unencapsulated portions of the first wire bonds are formed bythe wire bonds extending through a portion of the encapsulation layersuch that portions of the first wire bonds are uncovered by theencapsulation layer.

A still further embodiment of the present disclosure relates to analternative method for making a microelectronic package. The method ofthis embodiment includes forming a dielectric encapsulation layer on anin-process unit that includes a substrate having a first surface and asecond surface remote therefrom, a plurality of thin conductive elementsexposed at the first surface, and wire loops joined at a first base anda second base to respective ones of at least two of the thin conductiveelements. The encapsulation is being formed so as to at least partiallycover the first surface and the at least one wire loop. The methodfurther includes removing a portion of the encapsulation layer and aportion of the wire loops so as sever each of the wire loops intoseparate wire bonds corresponding to a respective one of the first andsecond bases. The wire bonds, thus, have end surfaces remote from thesubstrate and remote from the bases, and each wire bond defines an edgesurface extending between the base and the end surface thereof. Theencapsulation layer fills spaces between the wire bonds such that thewire bonds are separated from one another by the encapsulation layer.The wire bonds have unencapsulated portions formed by free ends thereofthat are at least partially uncovered by the encapsulation layer.

Another embodiment of the present disclosure relates to system thatincludes a microelectronic package or assembly according to one of theembodiments thereof discussed above and one or more other electroniccomponents electrically connected to the microelectronic package. Thesystem can further include a housing, in which the microelectronicpackage or assembly and the other electronic components can be mounted.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a microelectronic package according to an embodiment of thepresent invention;

FIG. 2 shows a top elevation view of the microelectronic package of FIG.1;

FIG. 3 shows a microelectronic package according to an alternativeembodiment of the present invention;

FIG. 4 shows a microelectronic package according to an alternativeembodiment of the present invention;

FIG. 5 shows a microelectronic package according to an alternativeembodiment of the present invention;

FIG. 6 shows a stacked microelectronic assembly including amicroelectronic package according to an embodiment of the presentinvention;

FIG. 7 shows a microelectronic package according to an alternativeembodiment of the present invention;

FIGS. 8A-8E show a detail view of a portion of a microelectronic packageaccording to various embodiments of the present invention;

FIG. 9 shows a detail view of a portion of a microelectronic packageaccording to an alternative embodiment of the present invention;

FIGS. 10A-10D show a detail view of a portion of a microelectronicpackage according to various embodiments of the present invention;

FIGS. 11-14 show a microelectronic package during various steps offabrication thereof according to an embodiment of the present invention;

FIG. 15 shows a microelectronic package during a fabrication stepaccording to an alternative embodiment of the present invention;

FIGS. 16A-16C show a detail view of a portion of a microelectronicpackage during various steps of fabrication thereof according to anembodiment of the present invention;

FIGS. 17A-17C show a detail view of a portion of a microelectronicpackage during various steps of fabrication thereof according to analternative embodiment of the present invention;

FIG. 18 shows a top elevation view of a microelectronic packageaccording to an alternative embodiment of the present invention;

FIG. 19 shows a top elevation view of a portion of a microelectronicpackage according to an alternative embodiment of the present invention;

FIG. 20 shows a top view of a microelectronic package according to afurther alternative embodiment of the present invention;

FIG. 21 shows a front elevation view of the microelectronic package ofclaim 20;

FIG. 22 shows a front elevation view of a microelectronic packageaccording to a further alternative embodiment of the present invention;

FIG. 23 shows a system according to a further embodiment of the presentinvention;

FIG. 24 shows a front elevation view of a microelectronic packageaccording to a further alternative embodiment of the present invention;

FIG. 25 shows a front elevation view of a microelectronic packageaccording to a further alternative embodiment of the present invention;

FIG. 26 shows a top view of a microelectronic package according to avariation of the embodiment of FIG. 25;

FIG. 27 shows a front elevation view of a microelectronic packageaccording to a further alternative embodiment of the present invention;and

FIG. 28 shows a top view of a microelectronic package according to avariation of the embodiment of FIG. 27.

DETAILED DESCRIPTION

Turning now to the figures, where similar numeric references are used toindicate similar features, there is shown in FIG. 1 a microelectronicassembly 10 according to an embodiment of the present invention. Theembodiment of FIG. 1 is a microelectronic assembly in the form of apackaged microelectronic element such as a semiconductor chip assemblythat is used in computer or other electronic applications.

The microelectronic assembly 10 of FIG. 1 includes a substrate 12 havinga first surface 14 and a second surface 16. The substrate 12 typicallyis in the form of a dielectric element, which is substantially flat. Thedielectric element may be sheet-like and may be thin. In particularembodiments, the dielectric element can include one or more layers oforganic dielectric material or composite dielectric materials, such as,without limitation: polyimide, polytetrafluoroethylene (“PTFE”), epoxy,epoxy-glass, FR-4, BT resin, thermoplastic, or thermoset plasticmaterials. The first surface 14 and second surface 16 are preferablysubstantially parallel to each other and are spaced apart at a distanceperpendicular to the surfaces 14,16 defining the thickness of thesubstrate 12. The thickness of substrate 12 is preferably within a rangeof generally acceptable thicknesses for the present application. In anembodiment, the distance between the first surface 14 and the secondsurface 16 is between about 25 and 500 μm. For purposes of thisdiscussion, the first surface 14 may be described as being positionedopposite or remote from second surface 16. Such a description, as wellas any other description of the relative position of elements usedherein that refers to a vertical or horizontal position of such elementsis made for illustrative purposes only to correspond with the positionof the elements within the Figures, and is not limiting.

In a preferred embodiment, substrate 12 is considered as divided into afirst region 18 and a second region 20. The first region 18 lies withinthe second region 20 and includes a central portion of the substrate 12and extends outwardly therefrom. The second region 20 substantiallysurrounds the first region 18 and extends outwardly therefrom to theouter edges of the substrate 12. In this embodiment, no specificcharacteristic of the substrate itself physically divides the tworegions; however, the regions are demarked for purposes of discussionherein with respect to treatments or features applied thereto orcontained therein.

A microelectronic element 22 can be mounted to first surface 14 ofsubstrate 12 within first region 18. Microelectronic element 22 can be asemiconductor chip or another comparable device. In the embodiment ofFIG. 1, microelectronic element 22 is mounted to first surface 14 inwhat is known as a conventional or “face-up” fashion. In such anembodiment, wire leads 24 can be used to electrically connectmicroelectronic element 22 to some of a plurality of conductive elements28 exposed at first surface 14. Wire leads 24 can also be joined totraces (not shown) or other conductive features within substrate 12 thatare, in turn, connected to conductive elements 28.

Conductive elements 28 include respective “contacts” or pads 30 that areexposed at the first surface 14 of substrate 12. As used in the presentdescription, when an electrically conductive element is described asbeing “exposed at” the surface of another element having dielectricstructure, it indicates that the electrically conductive structure isavailable for contact with a theoretical point moving in a directionperpendicular to the surface of the dielectric structure toward thesurface of the dielectric structure from outside the dielectricstructure. Thus, a terminal or other conductive structure that isexposed at a surface of a dielectric structure may project from suchsurface; may be flush with such surface; or may be recessed relative tosuch surface and exposed through a hole or depression in the dielectric.The conductive elements 28 can be flat, thin elements in which pad 30 isexposed at first surface 14 of substrate 12. In one embodiment,conductive elements 28 can be substantially circular and can beinterconnected between each other or to microelectronic element 22 bytraces (not shown). Conductive elements 28 can be formed at least withinsecond region 20 of substrate 12. Additionally, in certain embodiments,conductive elements 28 can also be formed within first region 18. Suchan arrangement is particularly useful when mounting microelectronicelement 122 (FIG. 3) to substrate 112 in what is known as a “flip-chip”configuration, where contacts on the microelectronic element 122 can beconnected to conductive elements 128 within first region 118 by solderbumps 126 or the like that are positioned beneath microelectronicelement 122. In another configuration as shown in FIG. 22,microelectronic element 622 is mounted face-down on substrate 612 andelectrically connected to a conductive feature on the chip by wire leads624 that extend over an outwardly-facing surface, such as surface 616,of substrate 612. In the embodiment shown, wire leads 624 pass throughan opening 625 in substrate 612 and can be encapsulated by an overmold699.

In an embodiment, conductive elements 28 are formed from a solid metalmaterial such as copper, gold, nickel, or other materials that areacceptable for such an application, including various alloys includingone or more of copper, gold, nickel or combinations thereof.

At least some of conductive elements 28 can be interconnected tocorresponding second conductive elements 40, such as conductive pads,exposed at second surface 16 of substrate 12. Such an interconnectioncan be completed using vias 41 formed in substrate 12 that can be linedor filled with conductive metal that can be of the same material asconductive elements 28 and 40. Optionally, conductive elements 40 can befurther interconnected by traces on substrate 12.

Microelectronic assembly 10 further includes a plurality of wire bonds32 joined to at least some of the conductive elements 28, such as on thepads 30 thereof. Wire bonds 32 are joined at a base 34 thereof to theconductive elements 28 and can extend to a free end 36 remote from therespective bases 34 and from substrate 12. The ends 36 of wire bonds 32are characterized as being free in that they are not electricallyconnected or otherwise joined to microelectronic element 22 or any otherconductive features within microelectronic assembly 10 that are, inturn, connected to microelectronic element 22. In other words, free ends36 are available for electronic connection, either directly orindirectly as through a solder ball or other features discussed herein,to a conductive feature external to assembly 10. The fact that ends 36held in a predetermined position by, for example, encapsulant layer 42or otherwise joined or electrically connected to another conductivefeature does not mean that they are not “free” as described herein, solong as any such feature is not electrically connected tomicroelectronic element 22. Conversely, base 34 is not free as it iseither directly or indirectly electrically connected to microelectronicelement 22, as described herein. As shown in FIG. 1, base 34 can besubstantially rounded in shape, extending outward from an edge surface37 of wire bond 32 defined between base 34 and end 36. The particularsize and shape of base 34 can vary according to the type of materialused to form wire bond 32, the desired strength of the connectionbetween wire bond 32 and conductive element 28, or the particularprocess used to form wire bond 32. Exemplary methods for making wirebonds 32 are described in U.S. Pat. No. 7,391,121 to Otremba and in U.S.Pat. App. Pub. No. 2005/0095835 (describing a wedge-bonding procedurethat can be considered a form of wire bonding) the disclosures of whichare both incorporated herein by reference in their entireties.Alternative embodiments are possible where wire bonds 32 areadditionally or alternatively joined to conductive elements 40 exposedon second surface 16 of substrate 12, extending away therefrom.

Wire bond 32 can be made from a conductive material such as copper,gold, nickel, solder, aluminum or the like. Additionally, wire bonds 32can be made from combinations of materials, such as from a core of aconductive material, such as copper or aluminum, for example, with acoating applied over the core. The coating can be of a second conductivematerial, such as aluminum, nickel or the like. Alternatively, thecoating can be of an insulating material, such as an insulating jacket.In an embodiment, the wire used to form wire bonds 32 can have athickness, i.e., in a dimension transverse to the wire's length, ofbetween about 15 μm and 150 μm. In other embodiments, including those inwhich wedge bonding is used, wire bonds 32 can have a thickness of up toabout 500 In general, a wire bond is formed on a conductive element,such as conductive element 28, a pad, trace or the like, usingspecialized equipment that is known in the art. A leading end of a wiresegment is heated and pressed against the receiving surface to which thewire segment bonds, typically forming a ball or ball-like base 34 joinedto the surface of the conductive element 28. The desired length of thewire segment to form the wire bond is drawn out of the bonding tool,which can then cut the wire bond at the desired length. Wedge bonding,which can be used to form wire bonds of aluminum, for example, is aprocess in which the heated portion of the wire is dragged across thereceiving surface to form a wedge that lies generally parallel to thesurface. The wedge-bonded wire bond can then be bent upward, ifnecessary, and extended to the desired length or position beforecutting. In a particular embodiment, the wire used to form a wire bondcan be cylindrical in cross-section. Otherwise, the wire fed from thetool to form a wire bond or wedge-bonded wire bond may have a polygonalcross-section such as rectangular or trapezoidal, for example.

The free end 36 of wire bond 32 has an end surface 38. End surface 38can form at least a part of a contact in an array formed by respectiveend surfaces 38 of a plurality of wire bonds 32. FIG. 2 shows anexemplary pattern for such an array of contacts formed by end surfaces38. Such an array can be formed in an area array configuration,variations of which could be implemented using the structures describedherein. Such an array can be used to electrically and mechanicallyconnect the microelectronic assembly 10 to another microelectronicstructure, such as to a printed circuit board (“PCB”), or to otherpackaged microelectronic elements, an example of which is shown in FIG.6. In such a stacked arrangement, wire bonds 32 and conductive elements28 and 40 can carry multiple electronic signals therethrough, eachhaving a different signal potential to allow for different signals to beprocessed by different microelectronic elements in a single stack.Solder masses 52 can be used to interconnect the microelectronicassemblies in such a stack, such as by electronically and mechanicallyattaching end surfaces 38 to conductive elements 40.

Microelectronic assembly 10 further includes an encapsulation layer 42formed from a dielectric material. In the embodiment of FIG. 1,encapsulation layer 42 is formed over the portions of first surface 14of substrate 12 that are not otherwise covered by or occupied bymicroelectronic element 22, or conductive elements 28. Similarly,encapsulation layer 42 is formed over the portions of conductiveelements 28, including pad 30 thereof, that are not otherwise covered bywire bonds 32. Encapsulation layer 42 can also substantially covermicroelectronic element 22, wire bonds 32, including the bases 34 and atleast a portion of edge surfaces 37 thereof. A portion of wire bonds 32can remain uncovered by encapsulation layer 42, which can also bereferred to as unencapsulated, thereby making the wire bond availablefor electrical connection to a feature or element located outside ofencapsulation layer 42. In an embodiment, end surfaces 38 of wire bonds32 remain uncovered by encapsulation layer 42 within major surface 44 ofencapsulation layer 42. Other embodiments are possible in which aportion of edge surface 37 is uncovered by encapsulation layer 42 inaddition to or as an alternative to having end surface 38 remainuncovered by encapsulation layer 42. In other words, encapsulation layer42 can cover all of microelectronic assembly 10 from first surface 14and above, with the exception of a portion of wire bonds 32, such as endsurfaces 38, edge surfaces 37 or combinations of the two. In theembodiments shown in the Figures, a surface, such as major surface 44 ofencapsulation layer 42 can be spaced apart from first surface 14 ofsubstrate 12 at a distance great enough to cover microelectronic element22. Accordingly, embodiments of microelectronic assembly 10 in whichends 38 of wire bonds 32 are flush with surface 44, will include wirebonds 32 that are taller than the microelectronic element 22, and anyunderlying solder bumps for flip chip connection. Other configurationsfor encapsulation layer 42, however, are possible. For example, theencapsulation layer can have multiple surfaces with varying heights. Insuch a configuration, the surface 44 within which ends 38 are positionedcan be higher or lower than an upwardly facing surface under whichmicroelectronic element 22 is located.

Encapsulation layer 42 serves to protect the other elements withinmicroelectronic assembly 10, particularly wire bonds 32. This allows fora more robust structure that is less likely to be damaged by testingthereof or during transportation or assembly to other microelectronicstructures. Encapsulation layer 42 can be formed from a dielectricmaterial with insulating properties such as that described in U.S.Patent App. Pub. No. 2010/0232129, which is incorporated by referenceherein in its entirety.

FIG. 3 shows an embodiment of microelectronic assembly 110 having wirebonds 132 with ends 136 that are not positioned directly above therespective bases 34 thereof. That is, considering first surface 114 ofsubstrate 112 as extending in two lateral directions, so as tosubstantially define a plane, end 136 or at least one of the wire bonds132 is displaced in at least one of these lateral directions from acorresponding lateral position of base 134. As shown in FIG. 3, wirebonds 132 can be substantially straight along the longitudinal axisthereof, as in the embodiment of FIG. 1, with the longitudinal axisbeing angled at an angle 146 with respect to first surface 114 ofsubstrate 112. Although the cross-sectional view of FIG. 3 only showsthe angle 146 through a first plane perpendicular to first surface 114,wire bond 132 can also be angled with respect to first surface 114 inanother plane perpendicular to both that first plane and to firstsurface 114. Such an angle can be substantially equal to or differentthan angle 146. That is the displacement of end 136 relative to base 134can be in two lateral directions and can be by the same or a differentdistance in each of those directions.

In an embodiment, various ones of wire bonds 132 can be displaced indifferent directions and by different amounts throughout the assembly110. Such an arrangement allows for assembly 110 to have an array thatis configured differently on the level of surface 144 compared to on thelevel of substrate 12. For example, an array can cover a smaller overallarea or have a smaller pitch on surface 144 than at the first surface114 level compared to that at first surface 114 of substrate 112.Further, some wire bonds 132 can have ends 138 that are positioned abovemicroelectronic element 122 to accommodate a stacked arrangement ofpackaged microelectronic elements of different sizes. In anotherexample, shown in FIG. 19, wire bonds 132 can be configured such thatthe end 138A of one wire bond 132A is positioned substantially above thebase 134B of another wire bond 132B, the end 138B of that wire bond 134Bbeing positioned elsewhere. Such an arrangement can be referred to aschanging the relative position of a contact end surface 136 within anarray of contacts, compared to the position of a corresponding contactarray on second surface 116. Within such an array, the relativepositions of the contact end surfaces can be changed or varied, asdesired, depending on the microelectronic assembly's application orother requirements.

FIG. 4 shows a further embodiment of a microelectronic subassembly 210having wire bonds 232 with ends 236 in displaced lateral positions withrespect to bases 234. In the embodiment of FIG. 4, the wire bonds 132achieve this lateral displacement by including a curved portion 248therein. Curved portion 248 can be formed in an additional step duringthe wire bond formation process and can occur, for example, while thewire portion is being drawn out to the desired length. This step can becarried out using available wire-bonding equipment, which can includethe use of a single machine.

Curved portion 248 can take on a variety of shapes, as needed, toachieve the desired positions of the ends 236 of the wire bonds 232. Forexample, curved portions 248 can be formed as S-curves of variousshapes, such as that which is shown in FIG. 4 or of a smoother form(such as that which is shown in FIG. 5). Additionally, curved portion248 can be positioned closer to base 234 than to end 236 or vice-versa.Curved portion 248 can also be in the form of a spiral or loop, or canbe compound including curves in multiple directions or of differentshapes or characters.

FIG. 5 shows a further exemplary embodiment of a microelectronic package310 having a combination of wire bonds 332 having various shapes leadingto various relative lateral displacements between bases 334 and ends336. Some of wire bonds 332A are substantially straight with ends 336Apositioned above their respective bases 334A, while other wire bonds332B include a subtle curved portion 348B leading to a somewhat slightrelative lateral displacement between end 336B and base 334B. Further,some wire bonds 332C include curved portions 348C having a sweepingshape that result in ends 336C that are laterally displaced from therelative bases 334C at a greater distance than that of ends 336B. FIG. 5also shows an exemplary pair of such wire bonds 332Ci and 332Cii thathave bases 334Ci and 334Cii positioned in the same row of asubstrate-level array and ends 336Ci and 336Cii that are positioned indifferent rows of a corresponding surface-level array.

A further variation of a wire bond 332D is shown that is configured tobe uncovered by encapsulation layer 342 on a side surface thereof. Inthe embodiment shown free end 336D is uncovered, however, a portion ofedge surface 337D can additionally or alternatively be uncovered byencapsulation layer 342. Such a configuration can be used for groundingof microelectronic assembly 10 by electrical connection to anappropriate feature or for mechanical or electrical connection to otherfeatured disposed laterally to microelectronic assembly 310.Additionally, FIG. 5 shows an area of encapsulation layer 342 that hasbeen etched away, molded, or otherwise formed to define a recessedsurface 345 that is positioned closer to substrate 12 than major surface344. One or more wire bonds, such as wire bond 332A can be uncoveredwithin an area along recessed surface 345. In the exemplary embodimentshown in FIG. 5, end surface 338A and a portion of edge surface 337A areuncovered by encapsulation layer 342. Such a configuration can provide aconnection, such as by a solder ball or the like, to another conductiveelement by allowing the solder to wick along edge surface 337A and jointhereto in addition to joining to end surface 338. Other configurationsby which a portion of a wire bond can be uncovered by encapsulationlayer 342 along recessed surface 345 are possible, including ones inwhich the end surfaces are substantially flush with recessed surface 345or other configurations shown herein with respect to any other surfacesof encapsulation layer 342. Similarly, other configurations by which aportion of wire bond 332D is uncovered by encapsulation layer 342 alonga side surface can be similar to those discussed elsewhere herein withrespect to the variations of the major surface of the encapsulationlayer.

FIG. 5 further shows a microelectronic assembly 310 having twomicroelectronic elements 322 and 350 in an exemplary arrangement wheremicroelectronic element 350 is stacked, face-up, on microelectronicelement 322. In this arrangement, leads 324 are used to electricallyconnect microelectronic element 322 to conductive features on substrate312. Various leads are used to electronically connect microelectronicelement 350 to various other features of microelectronic assembly 310.For example, lead 388 electrically connects microelectronic element 350to conductive features of substrate 312, and lead 382 electricallyconnects microelectronic element 350 to microelectronic element 322.Further, wire bond 384, which can be similar in structure to variousones of wire bonds 332, is used to form a contact surface 386 on thesurface 344 of encapsulation layer 342 that electrically connected tomicroelectronic element 350. This can be used to directly electricallyconnect a feature of another microelectronic assembly to microelectronicelement 350 from above encapsulation layer 342. Such a lead could alsobe included that is connected to microelectronic element 322, includingwhen such a microelectronic element is present without a secondmicroelectronic element 350 affixed thereon. An opening (not shown) canbe formed in encapsulation layer 342 that extends from surface 344thereof to a point along, for example, lead 388, thereby providingaccess to lead 388 for electrical connection thereto by an elementlocated outside surface 344. A similar opening can be formed over any ofthe other leads or wire bonds 332, such as over wire bonds 332C at apoint away from the ends 336C thereof. In such an embodiment, ends 336Ccan be positioned beneath surface 344, with the opening providing theonly access for electrical connection thereto.

FIG. 6 shows a stacked package of microelectronic assemblies 410 and488. In such an arrangement solder masses 452 electrically andmechanically connect end surfaces 444 of assembly 410 to conductiveelements 440 of assembly 488. The stacked package can include additionalassemblies and can be ultimately attached to contacts 492 on a PCB 490or the like for use in an electronic device. In such a stackedarrangement, wire bonds 432 and conductive elements 440 can carrymultiple electronic signals therethrough, each having a different signalpotential to allow for different signals to be processed by differentmicroelectronic elements, such as microelectronic element 422 ormicroelectronic element 489, in a single stack.

In the exemplary configuration in FIG. 6, wire bonds 432 are configuredwith a curved portion 448 such that at least some of the ends 436 of thewire bonds 432 extend into an area that overlies a major surface of themicroelectronic element 422. Such an area can be defined by the outerperiphery of microelectronic element 422 and extending upwardlytherefrom. An example of such a configuration is shown from a viewfacing toward first surface of substrate 412 in FIG. 18, where wirebonds 432 overlie a rear major surface of the microelectronic element422, which is flip chip bonded at a front face thereof to substrate 412.In another configuration (FIG. 5), the microelectronic element 422 canbe mounted face up to the substrate 312, with the front face facing awayfrom the substrate 312 and at least one wire bond 332 overlying thefront face of microelectronic element 322. In one embodiment, such wirebond 332 is not electrically connected with microelectronic element 322.A wire bond 332 bonded to substrate 312 may also overlie the front orrear face of microelectronic element 350. The embodiment ofmicroelectronic assembly 410 shown in FIG. 18 is such that conductiveelements 428 are arranged in a pattern forming a first array in whichthe conductive elements 428 are arranged in rows and columns surroundingmicroelectronic element 422 and may have a predetermined pitch betweenindividual conductive elements 428. Wire bonds 432 are joined to theconductive elements 428 such that the respective bases 434 thereoffollow the pattern of the first array as set out by the conductiveelements 428. Wire bonds 432 are configured, however, such that therespective ends 436 thereof can be arranged in a different patternaccording to a second array configuration. In the embodiment shown thepitch of the second array can be different from, and in some cases finerthan that of the first array. However, other embodiments are possible inwhich the pitch of the second array is greater than the first array, orin which the conductive elements 428 are not positioned in apredetermined array but the ends 436 of the wire bonds 432 are. Furtherstill, conductive elements 428 can be configured in sets of arrayspositioned throughout substrate 412 and wire bonds 432 can be configuredsuch that ends 436 are in different sets of arrays or in a single array.

FIG. 6 further shows an insulating layer 421 extending along a surfaceof microelectronic element 422. Insulating layer 421 can be formed froma dielectric or other electrically insulating material prior to formingthe wire bonds. The insulating layer 421 can protect microelectronicelement from coming into contact with any of wire bonds 432 that extendthereover. In particular, insulating layer 421 can avoid electricalshort circuiting between wire bonds and short circuiting between a wirebond and the microelectronic element 422. In this way, the insulatinglayer 421 can help avoid malfunction or possible damage due tounintended electrical contact between a wire bond 432 and themicroelectronic element 422.

The wire bond configuration shown in FIGS. 6 and 18 can allow formicroelectronic assembly 410 to connect to another microelectronicassembly, such as microelectronic assembly 488, in certain instanceswhere the relative sizes of, for example, microelectronic assembly 488and microelectronic element 422 would not otherwise permit. In theembodiment of FIG. 6 microelectronic assembly 488 is sized such thatsome of the contact pads 440 are in an array within an area smaller thanthe area of the front or rear surface of the microelectronic element422. In a microelectronic assembly having substantially verticalconductive features, such as pillars, in place of wire bonds 432, directconnection between conductive elements 428 and pads 440 would not bepossible. However, as shown in FIG. 6, wire bonds 432 havingappropriately-configured curved portions 448 can have ends 436 in theappropriate positions to make the necessary electronic connectionsbetween microelectronic assembly 410 and microelectronic assembly 488.Such an arrangement can be used to make a stacked package wheremicroelectronic assembly 488 is, for example, a DRAM chip or the likehaving a predetermined pad array, and wherein microelectronic element422 is a logic chip configured to control the DRAM chip. This can allowa single type of DRAM chip to be used with several different logic chipsof varying sizes, including those which are larger than the DRAM chipbecause the wire bonds 432 can have ends 436 positioned wherevernecessary to make the desired connections with the DRAM chip. In analternative embodiment, microelectronic package 410 can be mounted onprinted circuit board 490 in another configuration, where theunencapsulated surfaces of wire bonds 432 are electrically connected topads 492 of circuit board 490. Further, in such an embodiment, anothermicroelectronic package, such as a modified version of package 488 canbe mounted on package 410 by solder balls 452 joined to pads 440.

FIG. 7 shows a microelectronic assembly 10, of the type shown in FIG. 1with a redistribution layer 54 extending along surface 44 ofencapsulation layer 42. As shown in FIG. 7, traces 58 are electricallyconnected to inner contact pads 61 which are electrically connected toend surfaces 38 of wire bonds 32 and extend through the substrate 56 ofredistribution layer 54 to contact pads 60 exposed on surface 62 ofsubstrate 56. An additional microelectronic assembly can then beconnected to contact pads 60 by solder masses or the like. A similarstructure to redistribution layer 54 can extend along second surface 16of substrate 12 in what is known as a fan-out layer. A fan out layer canallow microelectronic assembly 10 to connect to an array of a differentconfiguration than the conductive element 40 array would otherwisepermit.

FIGS. 8A-8E show various configurations that can be implemented in thestructure of or near the ends 36 of wire bonds 32 in a structure similarto FIGS. 1-7. FIG. 8A shows a structure in which a cavity 64 is formedin a portion of encapsulation layer 42 such that an end 36 of wire bond32 projects above a minor surface 43 of the encapsulation layer atcavity 64. In the embodiment shown, end surface 38 is positioned belowmajor surface 44 of encapsulation layer 42, and cavity 64 is structuredto expose end surface 38 at surface 44 to allow an electronic structureto connect thereto. Other embodiments are possible wherein end surface38 is substantially even with surface 44 or is spaced above surface 44.Further, cavity 64 can be configured such that a portion of edge surface37 of wire bond 32 near the end 36 thereof can be uncovered byencapsulation layer 42 within cavity 64. This can allow for a connectionto wire bond 32 from outside of assembly 10, such as a solderconnection, to be made from both end surface 38 and the uncoveredportion of edge surface 37 near end 36. Such a connection is shown inFIG. 8B and can provide a more robust connection to a second substrate94 using a solder mass 52. In an embodiment cavity 64 can have a depthbeneath surface 44 of between about 10 μm and 50 μm and can have a widthof between about 100 μm and 300 μm. FIG. 8B shows a cavity having asimilar structure to that of FIG. 8A, but with tapered side walls.Further, FIG. 8B shows a second microelectronic assembly 94 electricallyand mechanically connected to wire bond 32 by a solder mass 52 at acontact pad 96 exposed at a surface of a substrate 98 thereof.

Cavity 64 can be formed by removing a portion of encapsulation layer 42in the desired area of cavity 64. This can be done by known processesincluding, laser etching, wet etching, lapping or the like.Alternatively, in an embodiment where encapsulation layer 42 is formedby injection molding, cavity 64 can be formed by including acorresponding feature in the mold. Such a process is discussed in U.S.Pat. App. Pub. No. 2010/0232129, which is hereby incorporated byreference in its entirety. The tapered shape of cavity 64 shown in FIG.8B can be the result of a particular etching process used in itsformation.

FIGS. 8C and 8E show end structures that include a substantially roundedend portion 70 on wire bond 32. Rounded end portion 70 is configured tohave a cross-section that is wider than the cross-section of the portionof wire bond 32 between base 34 and end 36. Further rounded end portion70 includes an edge surface 71 that extends outward from the edgesurface 37 of wire bond 32 at the transition therebetween. Theincorporation of a rounded end portion 70 can act to secure wire bond 32within encapsulation layer 42 by providing an anchoring feature whereinthe change in direction of the surface 71 gives encapsulation layer 42 alocation to surround end 70 on three sides. This can help prevent wirebond 32 from becoming detached from conductive elements 28 on substrate12, resulting in a failed electrical connection. Additionally, therounded end portion 70 can provide increased surface area that isuncovered by encapsulation layer 42 within surface 44 to which anelectronic connection can be made. As shown in FIG. 8E, rounded endportion 70 can extend above surface 44. Alternatively, as shown in FIG.8C, rounded end portion 70 can further, be ground or otherwise flattenedto provide a surface that is substantially flush with surface 44 and canhave an area greater than the cross-section of wire bond 32.

A rounded end portion 70 can be formed by applying localized heat in theform of a flame or a spark at the end of the wire used to make wire bond32. Known wire bonding machines can be modified to carry out this step,which can be done immediately after cutting the wire. In this process,the heat melts the wire at the end thereof. This localized portion ofliquid metal is made round by the surface tension thereof and isretained when the metal cools.

FIG. 8D shows a configuration for microelectronic assembly 10 where end36 of wire bond 32 includes a surface 38 that is spaced above majorsurface 44 of encapsulation layer 42. Such a configuration can presentbenefits similar to that discussed with respect to cavity 64, above,specifically, by providing a more robust connection with a solder mass52 that wicks along the portion of edge surface 37 that is uncovered byencapsulation layer 42 above surface 44. In an embodiment, end surface38 can be spaced above surface 42 at a distance of between about 10 μmand 50 μm. Additionally, in the embodiment of FIG. 8D and any of theother embodiments in which a portion of edge surface 37 is uncovered byencapsulation layer 42 above a surface of encapsulation layer 42, theend can include a protective layer formed thereon. Such a layer caninclude an oxidation protection layer, including those made from gold,an oxide coating or an OSP.

FIG. 9 shows an embodiment of microelectronic assembly 10 with a studbump 72 formed on end surface 38 of wire bond 32. Stud bump 72 can beformed after making microelectronic assembly 10 by applying another,modified wire bond on top of end surface 44 and optionally extendingalong a portion of surface 44. The modified wire bond is cut orotherwise severed near the base thereof without drawing out a length ofwire. Stud bumps 72 containing certain metals may be applied directly toends 38 without first applying a bonding layer such as a UBM, thusproviding way of forming conductive interconnects to bond pads which arenot directly wettable by solder. This can be useful when wire bond 32 ismade from a non-wettable metal. In general, stud bumps consistingessentially of one or more of copper, nickel, silver, platinum and goldcan be applied this way. FIG. 9 shows a solder mass 52 formed over studbump 72 for electronic or mechanical connection to an additionalmicroelectronic assembly.

FIGS. 10A-10D show configurations for ends 36 of wire bonds 32 thatinclude a bent or curved shape. In each embodiment, end 36 of wire bond32 is bent such that a portion 74 thereof extends substantially parallelto surface 44 of encapsulation layer 42 such that at least a portion ofedge surface 76 is not covered by, for example, major surface 44. Thisportion of edge surface 37 can extend upwards outside of surface 44 orcan be ground or otherwise flattened so as to extend substantially flushwith surface 44. The embodiment of FIG. 10A includes an abrupt bend inwire bond 32 at the portion 74 of end 36 that is parallel to surface 44and terminates in an end surface 38 that is substantially perpendicularto surface 44. FIG. 10B shows an end 36 having a more gradual curve nearthe portion 74 of end 36 that is parallel to surface 44 than that whichis shown in FIG. 10A. Other configurations are possible, including thosein which a portion of a wire bond according to those shown in FIG. 3, 4,or 5 includes an end with a portion thereof substantially parallel tosurface 44 and having a portion of the edge surface thereof uncovered byencapsulation layer 42 at a location within surface 44. Additionally,the embodiment of FIG. 10B includes a hooked portion 75 on the endthereof, which positions end surface 38 below surface 44 withinencapsulation layer 42. This can provide a more robust structure for end36 that is less likely to become dislodged from within encapsulationlayer 42. FIGS. 10C and 10D show structures that are, respectively,similar to those shown in FIGS. 10A and 10B, but are uncovered byencapsulation layer 42 at a location along surface 44 by cavities 64formed in encapsulation layer 42. These cavities can be similar instructure to those discussed above with respect to FIGS. 8A and 8B. Theinclusion of ends 36 including a portion 74 thereof that extendsparallel to surface 44 can provide increased surface area for connectiontherewith by virtue of the elongated uncovered edge surface 76. Thelength of such a portion 74 can be greater than the width ofcross-section of the wire used to form wire bond 32.

FIGS. 11-15 show a microelectronic assembly 10 in various steps of afabrication method thereof. FIG. 11 shows microelectronic assembly 10′at a step where microelectronic element 22 has been electrically andmechanically connected to substrate 12 on first surface 14 and withinfirst region 18, thereof. Microelectronic element 22 is shown in FIG. 11as being mounted on substrate 12 in a flip-chip arrangement by soldermasses 26. Alternatively face-up bonding, could be used instead, as seenabove in FIG. 1. In the embodiment of the method step shown in FIG. 11,a dielectric underfill layer 66 may be provided between microelectronicelement 22 and substrate 12.

FIG. 12 shows microelectronic assembly 10″ having wire bonds 32 appliedon pads 30 of conductive elements 28 exposed on first surface 14 ofsubstrate 12. As discussed, wire bonds 32 can be applied by heating anend of a wire segment to soften the end such that it forms a depositionbond to conductive element 28 when pressed thereto, forming base 34. Thewire is then drawn out away from conductive element 28 and manipulated,if desired, in a specified shape before being cut or otherwise severedto form end 36 and end surface 38 of wire bond 32. Alternatively, wirebonds 32 can be formed from, for example, an aluminum wire by wedgebonding. Wedge bonding is formed by heating a portion of the wireadjacent the end thereof and dragging it along the conductive element 28with pressure applied thereto. Such a process is described further inU.S. Pat. No. 7,391,121, the disclosure of which is hereby incorporatedby reference herein in its entirety.

In FIG. 13 encapsulation layer 42 has been added to microelectronicassembly 10′″ by being applied over first surface 14 of substrate,extending upwardly therefrom and along edge surfaces 37 of wire bonds32. Encapsulation layer 42 also covers underfill layer 66. Encapsulationlayer 42 can be formed by depositing a resin over microelectronicassembly 10″ shown in FIG. 12. This can be done by placing assembly 10″in an appropriately configured mold having a cavity in the desired shapeof the encapsulation layer 42 that can receive assembly 10″. Such a moldand the method of forming a encapsulation layer therewith can be asshown and described in U.S. Pat. App. Pub. No 2010/0232129, thedisclosure of which is incorporated by reference herein it its entirety.Alternatively, encapsulation layer 42 can be prefabricated to thedesired shape from an at least partially compliant material. In thisconfiguration, compliant properties of the dielectric material allowencapsulation layer 42 to be pressed into position over wire bonds 32and microelectronic element 22. In such a step, wire bonds 32 penetrateinto the compliant material forming respective holes therein, alongwhich encapsulation layer 42 contacts edge surfaces 37. Further,microelectronic element 22 may deform the compliant material so that itcan be received therein. The compliant dielectric material can becompressed to expose end surfaces 38 on outer surface 44. Alternatively,any excess compliant dielectric material can be removed fromencapsulation layer to form a surface 44 on which ends surfaces 38 ofwire bonds 32 are uncovered or cavities 64 can be formed that uncoverend surfaces 38 at a location within surface 44.

In the embodiment shown in FIG. 13, encapsulation layer is formed suchthat, initially, surface 44 thereof is spaced above end surfaces 38 ofwire bonds 32. To expose the end surfaces 38, the portion ofencapsulation layer 42 that is above end surfaces 38 can be removed,exposing a new surface 44′ that is substantially flush with end surfaces38, as shown in FIG. 14. Alternatively, cavities 64, such as those shownin FIGS. 8A and 8B can be formed in which end surfaces 38 are uncoveredby encapsulation layer 42. In a further alternative, encapsulation layer42 can be formed such that surface 44 is already substantially flushwith end surfaces 38 or such that surface 44 is positioned below endsurfaces 38, as shown in FIG. 8D. Removal, if necessary, of a portion ofencapsulation layer 42 can be achieved by grinding, dry etching, laseretching, wet etching, lapping, or the like. If desired, a portion of theends 36 of wire bonds 32 can also be removed in the same, or anadditional, step to achieve substantially planar end surface 38 that aresubstantially flush with surface 44. If desired, cavities 64 can also beformed after such a step, or stud bumps, as shown in FIG. 10 can also beapplied. The resulting microelectronic assembly 10 can then be affixedon a PCB or otherwise incorporated in a further assembly, for example astacked package, as shown in FIG. 6.

In an alternative embodiment shown in FIG. 15, wire bonds 32 areinitially formed in pairs as portions 32′ of a wire loop. In thisembodiment, the loop is made in the form of a wire bond as discussedabove. The wire segment is drawn upward, then bent and drawn in adirection having at least a component thereof in the direction of thefirst surface 14 of substrate 13 and to a position substantiallyoverlying an adjacent conductive element 28. The wire is then drawnsubstantially downward to a position near the adjacent conductiveelement 28 before being cut or otherwise severed. The wire is thenheated and connected to the adjacent conductive element 28 by depositionbonding or the like to form the loop. Encapsulation layer 42 is thenformed so as to substantially cover the loop. A portion of encapsulationlayer 42 is then removed by grinding, etching or the like by a processthat also removes a portion of the loop such that the loop is severedand divided into its two portions 32′, thereby forming wire bonds 32with end surfaces 38 uncovered by encapsulation layer 42 at a locationalong surface 44 which is formed on encapsulation layer 42. Subsequentfinishing steps can then be applied to assembly 10, as discussed above.

FIGS. 16A-16C show steps in an alternative embodiment for makingcavities 64, as discussed above, surrounding ends 36 of wire bonds 32.FIG. 16A shows a wire bond 32, of the general type discussed above withrespect to FIGS. 1-6. Wire bond 32 has a mass of sacrificial material 78applied on end 36 thereof. The sacrificial material mass 78 can besubstantially spherical in shape, which can result from the material'ssurface tension during formation thereof, or other desired shapes thatwould be understood by a person of ordinary skill in the art.Sacrificial material mass 78 can be formed by dipping the ends 36 ofwire bonds 32 in solder paste to coat the ends thereof. The viscosity ofthe solder paste can be adjusted prior to dipping to control the amountof solder mass that wicking and surface tension cause to adhere to ends36. This can, accordingly, affect the size of masses 78 that are appliedon ends 36. Alternatively, masses 78 can be formed by depositing asoluble material onto the ends 36 of the wire bonds 32. Other possiblemasses 78 can be individual solder balls or other masses on ends or byother means using other materials, such as copper or gold flashing, usedin microelectronic component fabrication, that can later be removed.

In FIG. 16B, a dielectric layer 42 is shown having been added toassembly 10, including upward along edge surfaces 37 of wire bonds 32.The dielectric layer also extends along a portion of the surface of thesacrificial material mass 78, such that it is spaced apart from the end36 of the wire bond 32 thereby. Subsequently, sacrificial material mass78 is removed, such as by washing or rinsing in a solvent, melting,chemical etching or other technique, leaving cavity 64 in dielectriclayer 42 substantially in the negative shape of mass 78 before removalthereof, and exposing a portion of edge surface 37 near end 36 of wirebond 32.

Alternatively, sacrificial material mass 78 can be formed to coatsubstantially all of wire bond 32 by extending along the edge surface 37thereof. This arrangement is shown in FIG. 17A. Such a coating can beapplied over wire bonds 32 after formation on assembly 10, as discussedabove, or can be applied as a coating to the wire used to make wirebonds 32. This would, essentially, be in the form of a coated wire or atwo-part wire, for example, with an inner core of copper and a soldercoating. FIG. 17B shows dielectric layer 42 applied over wire bonds 32and the sacrificial mass 78 so as to extend along the edge surface 79 ofthe sacrificial mass 78, thereby spacing apart dielectric layer 42 fromwire bond 32 substantially along the length thereof.

FIG. 17C shows the structure that results from removing a portion of thesacrificial material mass 78 to form cavity 64 around end 36 andexposing a portion of edge surface 37. In such an embodiment a majorityof, or at least a portion of, the sacrificial material mass 78 can beleft in place between dielectric layer 42 and wire bond 32. FIG. 17Cfurther shows a solder mass 52 electrically and mechanically connectingwire bond 32 to a contact pad 40A of another microelectronic structure10A.

FIGS. 20 and 21 show a further embodiment of a microelectronic assembly510 in which wire bonds 532 are formed on a lead-frame structure.Examples of lead frame structures are shown and described in U.S. Pat.Nos. 7,176,506 and 6,765,287 the disclosures of which are herebyincorporated by reference herein. In general, a lead frame is astructure formed from a sheet of conductive metal, such as copper, thatis patterned into segments including a plurality of leads and canfurther include a paddle, and a frame. The frame is used to secure theleads and the paddle, if used, during fabrication of the assembly. In anembodiment, a microelectronic element, such as a die or chip, can bejoined face-up to the paddle and electrically connected to the leadsusing wire bonds. Alternatively, the microelectronic element can bemounted directly onto the leads, which can extend under themicroelectronic element. In such an embodiment, contacts on themicroelectronic element can be electrically connected to respectiveleads by solder balls or the like. The leads can then be used to formelectrical connections to various other conductive structures forcarrying an electronic signal potential to and from the microelectronicelement. When the assembly of the structure is complete, which caninclude forming an encapsulation layer thereover, temporary elements ofthe frame can be removed from the leads and paddle of the lead frame, soas to form individual leads. For purposes of this disclosure, theindividual leads 513 and the paddle 515 are considered to be segmentedportions of what, collectively, forms a substrate 512 that includesconductive elements 528 in portions that are integrally formedtherewith. Further, in this embodiment, paddle 515 is considered to bewithin first region 518 of substrate 512, and leads 513 are consideredto be within second region 520. Wire bonds 524, which are also shown inthe elevation view of FIG. 21, connect microelectronic element 522,which is carried on paddle 515, to conductive elements 528 of leads 513.Wire bonds 532 can be further joined at bases 534 thereof to additionalconductive elements 528 on leads 513. Encapsulation layer 542 is formedonto assembly 510 leaving ends 538 of wire bonds 532 uncovered atlocations within surface 544. Wire bonds 532 can have additional oralternative portions thereof uncovered by encapsulation layer 542 instructures that correspond to those described with respect to the otherembodiments herein.

FIGS. 24-26 show a further alternative embodiment of a microelectronicpackage 810 having closed-loop wire bonds 832. The wire bonds 832 ofthis embodiment include two bases 834 a and 834 b that can be joined toadjacent conductive elements 828 a and 828 b, as shown in FIG. 24.Alternatively, the bases 834 a,834 b can both be joined on a commonconductive element 828, as shown in FIGS. 25 and 26. In such anembodiment, wire bonds 832 define an edge surface 837 that extendsbetween the two bases 834 a,834 b in a loop such that the edge surface837 extends upward in respective portions 837 a and 837 b from the basesto an apex 839 at a surface 844 of the encapsulation layer above thesubstrate 812. The encapsulation layer extends along at least some ofedge surface portions 837 a,837 b, separating the respective portionsfrom one another, as well as from other wire bonds 832 in package 810.At apex 839, at least a portion of the edge surface 837 is uncovered bythe encapsulation layer, such that the wire bond 832 is available forelectrical interconnection with another component, which can be anothermicroelectronic component or other component, e.g., a discrete elementsuch as a capacitor or inductor. As shown in FIGS. 24-26, wire bonds 832are formed such that apex 839 is offset from conductive element 828 inat least one lateral direction across the surface of the substrate 812.In one example, apex 839 can overlie a major surface of microelectronicelement 820 or otherwise overlie a first region of the substrate 812with which the microelectronic element 820 is aligned. Otherconfigurations for wire bonds 832 are possible, including configurationsin which apex 839 is positioned in any of the locations of the endsurfaces of the wire bonds discussed in the other embodiments. Further,apex 839 can be uncovered within a hole, such as shown in FIG. 8A. Stillfurther, apex 839 can be elongated and can be uncovered on surface 844extending over a length thereof, as shown with respect to the edgesurfaces in FIGS. 10A-10D. By providing a connection feature in the formof the uncovered edge surface 837 surrounding apex 839 that is supporteda wire bond 832 extending between two bases 834 a,834 b, rather thanone, more accurate placement of the connection feature in the directionsdefined by major surface 844 can be achieved.

FIGS. 27 and 28 show a variation of the embodiment of in FIGS. 24-26, inwhich bond ribbons 934 are used in place of wire bonds 832. Bond ribbonscan be a generally flat piece of conductive material, such as any of thematerials discussed previously for the formation of wire bonds. A bondribbon structure can be wider than it is thick, in contrast to a wirebond, which can be generally circular in cross section. As shown in FIG.27, bond ribbons 934 each include a first base 934 a that can be bondedextending along a portion of conductive element 928. A second base 934 bof ribbon bond 934 can be joined to a portion of first base 934 a. Edgesurface 937 extends between bases 934 a and 934 b in two correspondingportions 937 a and 937 b to apex 939. A portion of edge surface in thearea of apex 939 is uncovered by an encapsulant along a portion of majorsurface 944, thereof. Further variations are possible, such as thosedescribed with respect to the wire bonds used in the other embodimentsdisclosed herein.

The structures discussed above can be utilized in construction ofdiverse electronic systems. For example, a system 711 in accordance witha further embodiment of the invention includes microelectronic assembly710, as described above, in conjunction with other electronic components713 and 715. In the example depicted, component 713 is a semiconductorchip whereas component 715 is a display screen, but any other componentscan be used. Of course, although only two additional components aredepicted in FIG. 23 for clarity of illustration, the system may includeany number of such components. The microelectronic assembly 710 asdescribed above may be, for example, a microelectronic assembly asdiscussed above in connection with FIG. 1, or a structure incorporatingplural microelectronic assemblies as discussed with reference to FIG. 6.Assembly 710 can further include any one of the embodiments described inFIGS. 2-22. In a further variant, multiple variations may be provided,and any number of such structures may be used.

Microelectronic assembly 710 and components 713 and 715 are mounted in acommon housing 719, schematically depicted in broken lines, and areelectrically interconnected with one another as necessary to form thedesired circuit. In the exemplary system shown, the system includes acircuit panel 717 such as a flexible printed circuit board, and thecircuit panel includes numerous conductors 721, of which only one isdepicted in FIG. 23, interconnecting the components with one another.However, this is merely exemplary; any suitable structure for makingelectrical connections can be used.

The housing 719 is depicted as a portable housing of the type usable,for example, in a cellular telephone or personal digital assistant, andscreen 715 is exposed at the surface of the housing. Wheremicroelectronic assembly 710 includes a light-sensitive element such asan imaging chip, a lens 723 or other optical device also may be providedfor routing light to the structure. Again, the simplified system shownin FIG. 23 is merely exemplary; other systems, including systemscommonly regarded as fixed structures, such as desktop computers,routers and the like can be made using the structures discussed above.

Although the invention herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent invention. It is therefore to be understood that numerousmodifications may be made to the illustrative embodiments and that otherarrangements may be devised without departing from the spirit and scopeof the present invention as defined by the appended claims.

What is claimed is:
 1. A microelectronic package, comprising: asubstrate having first contacts on an upper surface thereof; amicroelectronic die having a lower surface attached to face the uppersurface of the substrate, the microelectronic die having second contactson an upper surface of the microelectronic die; wire bonds bonded to thefirst contacts at bases of the wire bonds; edge surfaces of the wirebonds extending from the bases and located between the bases andcorresponding end surfaces of the wire bonds; wherein first ones of thewire bonds are interconnected between a first portion of the firstcontacts and the second contacts; a dielectric structure formed abovethe upper surface of the substrate and the microelectronic die andbetween the bases of the wire bonds; wherein the end surfaces of secondones of the wire bonds are located above the upper surface of themicroelectronic die separated therefrom by a portion of the dielectricstructure located above the upper surface of the microelectronic die;and a stack of microelectronic elements interconnected to the substratevia the second ones of the wire bonds with the stack located over themicroelectronic die.
 2. The microelectronic package according to claim1, wherein uppermost portions of at least some of the second ones of thewire bonds are located between the upper surface of the microelectronicdie and conductive elements of the stack located below a lowermost oneof the microelectronic elements of the stack.
 3. The microelectronicpackage according to claim 2, wherein: the second ones of the wire bondsare bent over to have upper surfaces of the uppermost portions thereofabove an upper surface of the dielectric structure and to have lowersurfaces of the uppermost portions thereof below the upper surface ofthe dielectric structure; and the upper surfaces of the uppermostportions of the second ones of the wire bonds provide contact surfacesfor interconnection to the stack.
 4. The microelectronic packageaccording to claim 2, wherein: the second ones of the wire bonds arebent over to have upper surfaces of the uppermost portions thereof flushwith an upper surface of the dielectric structure and to have lowersurfaces of the uppermost portions thereof below the upper surface ofthe dielectric structure; and the upper surfaces of the uppermostportions of the second ones of the wire bonds provide contact surfacesfor interconnection to the stack.
 5. The microelectronic packageaccording to claim 2, wherein: the second ones of the wire bonds arebent over to have upper surfaces of the uppermost portions thereof belowan upper surface of the dielectric structure and to have lower surfacesof the uppermost portions thereof below the upper surface of thedielectric structure; and the upper surfaces of the uppermost portionsof the second ones of the wire bonds provide contact surfaces forinterconnection to the stack.
 6. The microelectronic package accordingto claim 2, further comprising coatings disposed around portions of theedge surfaces.
 7. The microelectronic package according to claim 6,wherein the coatings are disposed around portions of the edge surfacesof the second ones of the wire bonds with the uppermost portions of thesecond ones of the wire bonds not including the coatings.
 8. Themicroelectronic package according to claim 7, wherein the dielectricstructure defines recesses corresponding to absence of the coatingsalong the uppermost portions of the second ones of the wire bonds. 9.The microelectronic package according to claim 2, wherein the dielectricstructure includes one or more dielectric layers.
 10. A method forforming a microelectronic package, comprising: obtaining a substratehaving first contacts on an upper surface thereof; obtaining amicroelectronic die having a lower surface and having second contacts onan upper surface of the microelectronic die; attaching the lower surfaceof the microelectronic die to face the upper surface of the substrate;bonding wire bonds to the first contacts including forming bases of thewire bonds; wherein edge surfaces of the wire bonds extend from thebases and are located between the bases and corresponding end surfacesof the wire bonds; wherein first ones of the wire bonds areinterconnected between a first portion of the first contacts and thesecond contacts; forming a dielectric structure above the upper surfaceof the substrate and the microelectronic die and between the bases ofthe wire bonds; wherein the end surfaces of second ones of the wirebonds are located above the upper surface of the microelectronic die andseparated therefrom by a portion of the dielectric structure locatedabove the upper surface of the microelectronic die; and interconnectinga stack of microelectronic elements to the substrate via the second onesof the wire bonds with the stack located over the microelectronic die.11. The method for forming the microelectronic package according toclaim 10, wherein uppermost portions of at least some of the second onesof the wire bonds are located between the upper surface of themicroelectronic die and conductive elements of the stack located below alowermost one of the microelectronic elements of the stack.
 12. Themethod for forming the microelectronic package according to claim 11,further comprising: bending over the second ones of the wire bonds tohave upper surfaces of the uppermost portions thereof above an uppersurface of the dielectric structure and to have lower surfaces of theuppermost portions thereof below the upper surface of the dielectricstructure; and wherein the upper surfaces of the uppermost portions ofthe second ones of the wire bonds provide contact surfaces forinterconnection to the stack.
 13. The method for forming themicroelectronic package according to claim 11, further comprising:bending over the second ones of the wire bonds to have upper surfaces ofthe uppermost portions thereof flush with an upper surface of thedielectric structure and to have lower surfaces of the uppermostportions thereof below the upper surface of the dielectric structure;and wherein the upper surfaces of the uppermost portions of the secondones of the wire bonds provide contact surfaces for interconnection tothe stack.
 14. The method for forming the microelectronic packageaccording to claim 11, further comprising: bending over the second onesof the wire bonds to have upper surfaces of the uppermost portionsthereof below an upper surface of the dielectric structure and to havelower surfaces of the uppermost portions thereof below the upper surfaceof the dielectric structure; and wherein the upper surfaces of theuppermost portions of the second ones of the wire bonds provide contactsurfaces for interconnection to the stack.
 15. The method for formingthe microelectronic package according to claim 11, further comprisingforming coatings disposed around portions of the edge surfaces prior tothe forming of the dielectric structure.
 16. The method for forming themicroelectronic package according to claim 14, further comprisingremoving portions of the coatings disposed around portions of the edgesurfaces corresponding to the uppermost portions of the second ones ofthe wire bonds.
 17. The method for forming the microelectronic packageaccording to claim 15, wherein the dielectric structure defines recessescorresponding to absence of the coatings along the uppermost portions ofthe second ones of the wire bonds.
 18. The method for forming themicroelectronic package according to claim 11, wherein the dielectricstructure includes one or more dielectric layers.